Read only memory (ROM)-emulated memory (REM) profile mode of memory device

ABSTRACT

A programmable memory device includes a ROM block to store instructions associated with functionality of the programmable memory device, a memory array having reserved pages to store updates to be performed on the ROM block, and a controller coupled to the ROM block and the memory array. The controller is to, in response to receipt of a remote command from a vendor server via a host system, execute the instructions to perform operations including: executing a set features command to access the set of reserved pages, as an extension to one time programmable mode; programming a set of sub-feature parameters to a specified feature address of the reserved pages, where the set of sub-feature parameters are to trigger operation within a ROM-emulated memory (REM) profile mode; and programming a REM-profiled page of the reserved pages with REM data received from the vendor server via the host system.

RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 16/946,305, filed Jun. 16, 2020, which claimspriority to U.S. Provisional Patent Application No. 62/952,782, filedDec. 23, 2019, both of which are incorporated herein by these referencesin their entireties.

TECHNICAL FIELD

Embodiments of the disclosure relate generally to memory sub-systems,and more specifically, related to read only memory (ROM)-emulated memory(REM) profile mode of a memory device.

BACKGROUND

A memory sub-system can include one or more memory devices that storedata. The memory devices can be, for example, non-volatile memorydevices and volatile memory devices. In general, a host system canutilize a memory sub-system to store data at the memory devices and toretrieve data from the memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure.

FIG. 1A illustrates an example computing system that includes a memorysub-system according to embodiments of the present disclosure.

FIG. 1B illustrates a more detailed computing system that includes aprogrammable memory device adapted for operations within a REM profilemode according to various embodiments.

FIG. 2 is a flow chart of a method that illustrates a high-levelinteraction between a memory vendor, a memory device that employs a REMprofile mode, installed system, and customer of the memory sub-systemaccording to various embodiments.

FIG. 3 is a flow chart of an example method for programming the memorysub-system for operation within the REM profile mode according to anembodiment.

FIG. 4 is a flow chart of an example method for selection and operationwithin the REM profile mode after power up according to variousembodiments.

FIG. 5 is a block diagram of an example computer system in whichembodiments of the present disclosure can operate.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to read only memory(ROM)-emulated memory (REM) profile mode of a memory device. A memorysub-system can be a storage device, a memory module, or a hybrid of astorage device and memory module. Examples of storage devices and memorymodules are described below in conjunction with FIGS. 1A-1B. In general,a host system can utilize a memory sub-system that includes one or morememory components or devices. The host system can provide data to bestored at the memory sub-system and can request data to be retrievedfrom the memory sub-system.

The memory sub-system can include multiple memory components or memorydevices that can store data from the host system, to include aprogrammable memory device. A memory device can include a ROM (e.g., ROMblock) separate from programmable memory (e.g., memory array) of amemory device. The ROM stores instructions (e.g., microcode) for theprogrammable memory of the memory device. These instructions can beadapted to respond to commands (e.g., from a host system) and performoperations according to logic such as a state machine or the like. AROM-emulated memory (REM) of a memory device is data that can be storedinto reserved pages such as one-time programmable (OTP) pages of thememory array as a patch, e.g., an update to operation of theinstructions stored in the ROM. In this way, although the ROM is readonly, the operation of the ROM can be altered or fixed later on afterthe memory device has shipped to a customer. The REM data, for example,can be loaded from the OTP pages into a latches buffer and executed as apatch to the operation of the ROM instructions.

More specifically, the programmable memory (such as negative-AND typeflash memory (NAND) or other programmable non-volatile memory array) insome embodiments includes a set of reserved pages stored in an OTP areaof the programmable memory. The OTP area can be within a range of thereserved pages known to be available for permanent storage. In oneembodiment, to operate in OTP operation mode, a user enables the OTPoperation mode via issuance of a set features command to a specifiedfeature address (e.g., 90h) and to write a parameter (e.g., 01h) to afirst reserved page (P1) followed by three cycles of writing anotherparameter (e.g., 00h) to three additional reserved pages (e.g., P2, P3,P4). When the memory device is in OTP operation mode, subsequent PAGEREAD (e.g., 00h-30h) and PROGRAM PAGE (e.g., 80h-10h) commands areapplied to the OTP area of the programmable memory. In one embodiment,the parameters stored into OTP pages are to modify default power-onbehavior and operation of the memory device.

In various embodiments, a vendor of the memory device may need toperform updates to the ROM either to fix operation of the ROM or toinstall a debug patch for diagnostic purposes, for example, after thememory device is in operation in the field. In various embodiments, theOTP operation mode can be altered to allow the user to directly (or thevendor to remotely) trigger operation within a REM profile mode in whichthe vendor can remotely send and install REM-based patches withindesignated reserved pages of the OTP area. To do so, the local mediacontroller (e.g., control logic) of the programmable memory device canexecute the set features command and program a set of sub-featureparameters to a specified feature address of the set of reserved pagesthat are to trigger operation within the REM profile mode. In oneembodiment, the specified feature address is the same or similar to thatused to enter OTP operation mode (e.g., for pages P1, P2, P3, and P4)while the sub-feature parameters are different from those used to enterOTP operation mode. In another embodiment, the specified feature addressis different than that used to enter OTP operation mode while thesub-feature parameters are the same (or different) compared to thoseused to enter OTP operation mode. The processing device can then programa REM-profiled page of the set of reserved pages with REM data receivedfrom a host system, e.g., which received the REM data from the vendor.

In some embodiments, the processing device sets a flag stored in one ofa reserved page or the REM-profiled page upon programming theREM-profiled page. The flag can be adapted to indicate whether the REMdata (or REM code) is stored in the REM-profiled page, and thus is to beloaded for ROM operation. For example, after power up of the memorydevice, the processing device can detect that the flag is set, and thenload the REM data (or code) from the REM-profiled page into a latchesbuffer to be executed as a modification to operation of the ROMinstructions. In this way, operation within OTP operation mode and theREM profile mode can be distinguished, although the REM profile mode canbe seen as a sub-mode and extension of the OTP operation mode (in alsousing OTP reserved pages).

Advantages of the present disclosure include but are not limited tomaking possible firmware updates to the ROM of the memory device,allowing in-field debugging (e.g., of diagnostic failures of the memorydevice), allowing system teams the ability to load and execute testmodes of the memory device, and optionally providing access to certaintest modes (and their results) by customers without the customers havingaccess to the REM data itself. These advantages will be discussed inmore detail. Other advantages will be apparent to those skilled in theart of power disable features of a memory sub-system discussedhereinafter.

FIG. 1A illustrates an example computing system 100 that includes amemory sub-system 110 in accordance with some embodiments of the presentdisclosure. The memory sub-system 110 can include media, such as one ormore volatile memory devices (e.g., memory device 140), one or morenon-volatile memory devices (e.g., memory device 130), or a combinationof such.

A memory sub-system 110 can be a storage device, a memory module, or ahybrid of a storage device and memory module. Examples of a storagedevice include a solid-state drive (SSD), a flash drive, a universalserial bus (USB) flash drive, an embedded Multi-Media Controller (eMMC)drive, a Universal Flash Storage (UFS) drive, a secure digital (SD)card, and a hard disk drive (HDD). Examples of memory modules include adual in-line memory module (DIMM), a small outline DIMM (SO-DIMM), and anon-volatile dual in-line memory module (NVDIMM).

The computing system 100 can be a computing device such as a desktopcomputer, laptop computer, network server, mobile device, a vehicle(e.g., airplane, drone, train, automobile, or other conveyance),Internet of Things (IoT) enabled device, embedded computer (e.g., oneincluded in a vehicle, industrial equipment, or a networked commercialdevice), or such computing device that includes memory and a processingdevice.

The computing system 100 can include a host system 120 that is coupledto one or more memory sub-systems 110. In some embodiments, the hostsystem 120 is coupled to different types of memory sub-system 110. FIG.1A illustrates one example of a host system 120 coupled to one memorysub-system 110. As used herein, “coupled to” or “coupled with” generallyrefers to a connection between components or devices, which can be anindirect communicative connection or direct communicative connection(e.g., without intervening components or devices), whether wired orwireless, including connections such as electrical, optical, magnetic,etc.

The host system 120 can include a processor chipset and a software stackexecuted by the processor chipset. The processor chipset can include oneor more cores, one or more caches, a memory controller (e.g., NVDIMMcontroller), and a storage protocol controller (e.g., PCIe controller,SATA controller). The host system 120 uses the memory sub-system 110,for example, to write data to the memory sub-system 110 and read datafrom the memory sub-system 110.

The host system 120 can be coupled to the memory sub-system 110 via aphysical host interface. Examples of a physical host interface include,but are not limited to, a serial advanced technology attachment (SATA)interface, a peripheral component interconnect express (PCIe) interface,universal serial bus (USB) interface, Fibre Channel, Serial AttachedSCSI (SAS), Small Computer System Interface (SCSI), a dual in-linememory module (DIMM) interface (e.g., DIMM socket interface thatsupports Double Data Rate (DDR)), etc. The physical host interface canbe used to transmit data between the host system 120 and the memorysub-system 110. The host system 120 can further utilize an NVM Express(NVMe) interface to access the memory components (e.g., memory devices130) when the memory sub-system 110 is coupled with the host system 120by the PCIe interface. The physical host interface can provide aninterface for passing control, address, data, and other signals betweenthe memory sub-system 110 and the host system 120.

The memory devices can include any combination of the different types ofnon-volatile memory devices and/or volatile memory devices. The volatilememory devices (e.g., memory device 140) can be, but are not limited to,random access memory (RAM), such as dynamic random access memory (DRAM)and synchronous dynamic random access memory (SDRAM).

Some examples of non-volatile memory devices (e.g., memory device 130)include negative-and (NAND) type flash memory and write-in-place memory,such as three-dimensional cross-point (“3D cross-point”) memory. Across-point array of non-volatile memory can perform bit storage basedon a change of bulk resistance, in conjunction with a stackablecross-gridded data access array. Additionally, in contrast to manyflash-based memories, cross-point non-volatile memory can perform awrite in-place operation, where a non-volatile memory cell can beprogrammed without the non-volatile memory cell being previously erased.

Each of the memory devices 130 can include one or more arrays of memorycells, e.g., one or more memory array each including programmable memorycells. One type of memory cell, for example, single level cells (SLC)can store one bit per cell. Other types of memory cells, such asmulti-level cells (MLCs), triple level cells (TLCs), and quad-levelcells (QLCs), can store multiple bits per cell. In some embodiments,each of the memory devices 130 can include one or more arrays of memorycells such as SLCs, MLCs, TLCs, QLCs, or any combination of such. Insome embodiments, a particular memory device can include an SLC portion,and an MLC portion, a TLC portion, or a QLC portion of memory cells. Thememory cells of the memory devices 130 can be grouped as pages that canrefer to a logical unit of the memory device used to store data. Withsome types of memory (e.g., NAND), pages can be grouped to form blocks.

Although non-volatile memory components such as 3D cross-point type andNAND are described, the memory device 130 can be based on any other typeof non-volatile memory, such as read-only memory (ROM), phase changememory (PCM), self-selecting memory, other chalcogenide based memories,ferroelectric random access memory (FeRAM), magneto random access memory(MRAM), negative-or (NOR) flash memory, and electrically erasableprogrammable read-only memory (EEPROM).

A memory sub-system controller 115 (or controller 115 for simplicity)can communicate with the memory devices 130 to perform operations suchas reading data, writing data, or erasing data at the memory devices 130and other such operations. The memory sub-system controller 115 caninclude hardware such as one or more integrated circuits and/or discretecomponents, a buffer memory, or a combination thereof. The hardware caninclude a digital circuitry with dedicated (i.e., hard-coded) logic toperform the operations described herein. The memory sub-systemcontroller 115 can be a microcontroller, special purpose logic circuitry(e.g., a field programmable gate array (FPGA), an application specificintegrated circuit (ASIC), etc.), or other suitable processor.

The memory sub-system controller 115 can include a processor 117 (e.g.,processing device) configured to execute instructions stored in localmemory 119. In the illustrated example, the local memory 119 of thememory sub-system controller 115 includes an embedded memory configuredto store instructions for performing various processes, operations,logic flows, and routines that control operation of the memorysub-system 110, including handling communications between the memorysub-system 110 and the host system 120.

In some embodiments, the local memory 119 can include memory registersstoring memory pointers, fetched data, etc. The local memory 119 canalso include read-only memory (ROM) for storing micro-code. While theexample memory sub-system 110 in FIG. 1A has been illustrated asincluding the memory sub-system controller 115, in another embodiment ofthe present disclosure, a memory sub-system 110 does not include amemory sub-system controller 115, and can instead rely upon externalcontrol (e.g., provided by an external host, or by a processor orcontroller separate from the memory sub-system).

In general, the memory sub-system controller 115 can receive commands oroperations from the host system 120 and can convert the commands oroperations into instructions or appropriate commands to achieve thedesired access to the memory devices 130. The memory sub-systemcontroller 115 can be responsible for other operations such as wearleveling operations, garbage collection operations, error detection anderror-correcting code (ECC) operations, encryption operations, cachingoperations, and address translations between a logical address (e.g.,logical block address (LBA), namespace) and a physical address (e.g.,physical block address) that are associated with the memory devices 130.The memory sub-system controller 115 can further include host interfacecircuitry to communicate with the host system 120 via the physical hostinterface. The host interface circuitry can convert the commandsreceived from the host system into command instructions to access thememory devices 130 as well as convert responses associated with thememory devices 130 into information for the host system 120.

The memory sub-system 110 can also include additional circuitry orcomponents that are not illustrated. In some embodiments, the memorysub-system 110 can include a cache or buffer (e.g., DRAM) and addresscircuitry (e.g., a row decoder and a column decoder) that can receive anaddress from the memory sub-system controller 115 and decode the addressto access the memory devices 130.

In some embodiments, the memory devices 130 include local mediacontrollers 135 that operate in conjunction with memory sub-systemcontroller 115 to execute operations on one or more memory cells of thememory devices 130. An external controller (e.g., memory sub-systemcontroller 115) can externally manage the memory device 130 (e.g.,perform media management operations on the memory device 130). In someembodiments, memory sub-system 110 is a managed memory device, whichincludes a raw memory device having control logic (e.g., localcontroller 135) on the die and a controller (e.g., memory sub-systemcontroller 115) for media management within the same memory devicepackage. An example of a managed memory device is a managed NAND (MNAND)device. Memory device 130, for example, can represent a single diehaving some control logic (e.g., local media controller 135) embodiedthereon. In some embodiments, one or more components of memorysub-system 110 can be omitted.

In some embodiments, the controller 115 includes an error-correctingcode (ECC) encoder/decoder 111. The ECC encoder/decoder 111 can performECC encoding for data written to the memory devices 130 and ECC decodingfor data read from the memory devices 130, respectively. The ECCdecoding can be performed to decode an ECC codeword to correct errors inthe raw read data, and in many cases also to report the number of biterrors in the raw read data.

FIG. 1B illustrates a more detailed computing system 100B that includesa programmable memory device adapted for operations within a REM profilemode according to various embodiments. For example, the programmablememory device can be the memory device 130 discussed with reference toFIG. 1A. In some embodiments, the memory sub-system 110 includes anone-time programmable (OTP) operator 113 that is adapted to interfacewith the host system 120 to facilitate user (or remote) enabling of theOTP operation mode and the REM profile mode as described herein. In someembodiments, the OTP operator 113 can be part of the host system 120,the controller 115, or the memory device 130. For example, thecontroller 115 can include the processor 117 (e.g., processing device)configured to execute instructions stored in local memory 119 forperforming the operations described herein.

In some embodiments, the controller 115 includes at least a portion ofthe OTP operator 113. Further, the controller 115 can include theprocessor 117 (e.g., processing device) configured to executeinstructions stored in local memory 119 for performing the operationsdescribed herein. In some embodiments, the OTP operator 113 is part ofthe host system 120, an application, or an operating system.

In various embodiments, the memory device 130 (such as negative-AND typeflash memory (NAND) or other programmable non-volatile memory device)includes the local media controller 135 (e.g., control logic), aread-only memory (ROM) 138, page buffer(s) 140, static random accessmemory (SRAM) 142, a set of reserved pages 150, and registers 160. Invarious embodiments, a latches buffer 144 is located within the SRAM 142and/or the registers 160. The set of reserved pages 150, which can bestored in a memory array, can include OTP-profiled pages 150A (e.g., ina first range of the reserved pages) and REM-profiled pages 150B (e.g.,in a second range of the reserved pages). The pages within the set ofreserved pages 150 can be set aside for OTP operations and beprogrammable once, without option of performing an erase operation orfurther programming once the pages have been programmed. As discussed,the REM profile mode can be viewed as a sub-mode to the OTP operationmode.

In some embodiments, the ROM 138 stores instructions (e.g., microcode)for the programmable memory of the memory device 130, and is associatedwith functionality of the memory device 130. These instructions can beadapted to respond to commands (e.g., from the host system 120) andperform operations according to logic such as a state machine or othercode. Further, the page buffer(s) 140 can buffer data before the data isprogrammed into the ROM 138, This data can be received from the hostsystem 120. This data can include, for example, the REM data or REMcode, e.g., data that can be programmed into REM-profiled pages 150B asa patch or code that can be programmed into the REM-profiled pages 150Bas debug firmware or a test mode program. For example, the REM data orcode can be loaded (after power up of the memory device 130) into thelatches buffer 144. The local media controller 135 (or control logic) ofthe memory device 130 can execute the REM data out of the latches buffer144 as an update to operation of the instructions stored in the ROM 138or execute the REM code out of the latches buffer 144 as debug firmwareor a test mode program. In this way, although the ROM 138 is read only,the operation of the ROM can be altered or fixed later on after thememory device has shipped to a customer.

The REM data (or code), for example, can be loaded from the set ofreserved pages 150 into the latches buffer 144 and executed as a patch(e.g., update or modification) to the operation of the ROM instructions.As a patch, when executed, the REM data redirects the state machine ofthe ROM 138 to an identified address in the latches buffer 144 (e.g.,whether in the SRAM 142 or the one or more of the registers 160). Thestate machine can then reference the REM data loaded into the latchesbuffer 144 during execution. Until the power up sequence of the memorysub-system 110 completes, the REM data is not loaded and the memorydevice 130 operates just on the ROM firmware. In addition to the REMbeing automatically populated by the memory device 130, the REM data canbe manually populated by the host system 120 (e.g., by a user of thehost system 120) as well, as will be described in more detail.

In embodiments, the REM data (or code) functionally checks for when theprocessing device 130 tries to execute a particular command and replacesthe command with a different action. The REM data/code can also enableengineers to swap or change the microcode of the memory device 130,which is helpful for quick prototyping, there is no need to wait for adesign change to propagate a change to the microcode, and uniquetemporary behavior can be observed during specific tests. In variousembodiments, REM data/code includes a REM word or several words, e.g.,REM sequences. The REM sequences are to be stored together in theREM-profiled pages 150B so as to be executed together. Table 1illustrates an example of how some custom REM data or code can beprogrammed in the REM-profiled pages 150B of the reserved pages 150.

TABLE 1 Reserved Page Programmed with: Page_0 Custom REM Data Page_1Custom REM Code Multiple Accessible Pages Multiple custom REM data/code. . . . . . Page_n Custom REM Data

In embodiments, each custom REM data or REM code can target a differentusage. As just one example, bitline check test modes can be loaded asREM code and system firmware teams can execute this test mode to detectblocks of the memory device that are becoming harder to program. Oncedetected, the memory sub-system 110 can retire these blocks (e.g.,groups of cells).

In various embodiments, the OTP area of the memory device 130 is withina range of the OTP-profiled pages 150A known to be available forpermanent storage. Thus, customers (or users) can use the OTP area inany way desired, but typically is used to program serial numbers or topermanently store data (e.g., trim values) because the OTP area cannotbe erased. In one embodiment, to operate in OTP operation mode, a userenables the OTP operation mode via issuance of a set features (EFh)command to a specified feature address (e.g., 90h) and to write aparameter (e.g., 01h) to a first reserved page (P1) followed by threecycles of writing another parameter (e.g., 00h) to three additionalreserved pages (e.g., P2, P3, P4). These parameters can also beunderstood to be definitions or states to trigger a state machine of theROM operation to enter into the OTP operation mode. When the memorydevice 130 is in OTP operation mode, subsequent PAGE READ (e.g.,00h-30h) and PROGRAM PAGE (e.g., 80h-10h) commands are applied to theOTP area of the programmable memory. Other ways of entering (andexiting) OTP operation mode are envisioned, including writing differentparameters to different OTP pages.

In various embodiments, a vendor of the memory device may need toperform updates to the ROM 138 either to fix operation of the ROM (e.g.,via a firmware update) or to install a debug patch for diagnosticpurposes after the memory device 130 is in operation in the field. Invarious embodiments, the OTP operation mode is altered to allow a userto directly trigger entry into the REM profile mode (e.g., auser-selectable REM profile mode) via the host system 120 or to allow avendor to remotely trigger entry into the REM profile mode (e.g., aremotely-selectable REM profile mode). In either case, the vendor canthen remotely transfer (see FIG. 2 ) REM data (or code) to the hostsystem 120, upon receipt of which, the memory sub-system 110 installsthe REM data (or code) into the memory device 130, e.g., by way of thepage buffers 140.

In some embodiments, in order to alter entry into OTP operation mode tooperating within the REM profile mode, the local media controller 135(e.g., control logic) of the programmable memory can execute the setfeatures command and program a set of sub-feature parameters to aspecified feature address of the set of reserved pages. In theembodiments, the sub-feature parameters are designed to triggeroperation within the REM profile mode (as opposed to operation in theOTP operation mode). In one embodiment, the specified feature address isthe same or similar to that used to enter the OTP operation mode (e.g.,for pages P1, P2, P3, and P4) while the sub-feature parameters aredifferent from those used to enter the OTP operation mode. In anotherembodiment, the specified feature address is different than that used toenter OTP operation mode while the sub-feature parameters are the same(or different) compared to those used to enter OTP operation mode. Oncein the REM profile mode, the processing device can then program aREM-profiled page 150B of the set of reserved pages 150 with REM datareceived from a host system 120, e.g., which received the REM data (orcode) from the vendor. To do so, a program counter of the instructionsbeing executed in the ROM 138 may be shifted to point to theREM-profiled page 150B, e.g., as an address in the latches buffer towhere the REM-profiled page 150B is copied.

In some embodiments, the processing device is further to set a flag 152stored in one of a reserved page (of the set of reserved pages 150) orthe REM-profiled page (where the REM data was programmed) uponprogramming the REM-profiled page. The flag 152 can be adapted toindicate whether the REM data (or code) is stored in the REM-profiledpage, and thus is to be loaded for ROM operation. For example, afterpower up of the memory device, the processing device can detect that theflag 152 is set, and then load the REM data (or code) from theREM-profiled page into a latches buffer to be executed as a modificationto operation of the ROM instructions. In this way, operation within OTPoperation mode and the REM profile mode can be distinguished.

FIG. 2 is a flow chart of a method 200 that illustrates a high-levelinteraction between a memory vendor, a memory device that employs a REMprofile mode, installed system, and customer of the memory sub-systemaccording to various embodiments. The method 200 can be performed byprocessing logic that can include hardware (e.g., processing device,circuitry, dedicated logic, programmable logic, microcode, hardware of adevice, integrated circuit, etc.), software (e.g., instructions run orexecuted on a processing device), or a combination thereof. In someembodiments, the method 200 is performed by a vendor (e.g., assignee),the memory device 130, the host system 120, and a customer (or otheruser) with access to the host system 120 (see FIGS. 1A-1B). Althoughshown in a particular sequence or order, unless otherwise specified, theorder of the processes can be modified. Thus, the illustratedembodiments should be understood only as examples, and the illustratedprocesses can be performed in a different order, and some processes canbe performed in parallel. Additionally, one or more processes can beomitted in various embodiments. Thus, not all processes are required inevery embodiment. Other process flows are possible.

At operation 202, the customer (or user) starts a qualification test(QUAL), which is performed to verify the design and manufacturingprocess of the memory device 130 and can provide a baseline forsubsequent acceptance tests. At operation 204, the customer finds or isinformed of a failure (e.g., by the host system 120) in thequalification test, and sends a request with failure data related to thefailure to the vendor to perform diagnosis or (e.g., debug) the failureof the memory device 130.

At operation 208, the vendor can undertake the diagnosis process(debug), based on the failure data. For example, at operation 210, thevendor can determine, based on analysis of the failure data, thatmarginality exists on the memory device 130. The vendor, at operation214, can send a system debug firmware to the customer.

At operation 218, the customer can reload the system debug firmware viathe host system 120. At operation 220, the host system 120 can initiatethe reload of the system debug firmware. Here, the term “reload” is withreference to loading new REM code received from the vendor. In someembodiments, the vendor can remotely initiate the firmware reloadwithout intercession by the customer.

At operation 224, the memory device 130 reprograms the firmware, e.g.,the instructions or microcode executable by the ROM 138, with the REMcode by entering into the REM-profiled mode as discussed earlier. Whilein the REM-profiled mode, at operation 226, the memory device 130 canload REM-profiled pages with self-test abilities. For example, REM codeand associated test data can be programmed into the REM-profiled pages.Also at operation 226, the memory device 130 can collect debuginformation or data, and output the debug information data into the pagebuffer(s) 140 or the registers 160, e.g., to make it available to thehost system.

At operation 230, the host system 120 can copy the debug information (ordata), e.g., from the page buffer(s) 140 or registers 160, to anaccessible interface (e.g., a graphical user interface or other output)of the host system 120. At operation 234, the customer can send thedebug information (or data) to the vendor so that the vendor can developa solution, which is often a patch to the firmware of the ROM 138. Insome embodiments, operation 234 is skipped and the host system 120automatically sends the debug information (or data) back to the vendor.

At operation 238, the vendor can develop a REM update to the productionfirmware, where the REM update includes REM data and/or code to operateas a patch solution to the marginality that exists on the memory device130. The vendor can then send the REM data/code to the customer on thehost system 120.

At operation 242, the customer can reload the firmware to the hostsystem 120. This action can be as simple as initiating an executablereceived from the vendor (e.g., in an email or instant message) or copyall REM data/code to the memory device 130. At operation 244, the hostsystem can in turn initiate the firmware reload. In one embodiment, thevendor can remotely initiate the firmware reload at the host system 120,thereby bypassing the customer.

At operation 250, the memory device 130 reprograms the firmware via theREM-profiled pages 150B, as discussed previously and that will bediscussed in additional detail with reference to FIGS. 3-4 . The REMupdate can be REM code with new functionality, like a special testoperation, or can contain a patch that fixes a bug in the firmware ofthe ROM 138. In either case, a full set of REM code is loaded, e.g., theaddresses within REM address space of the latches buffer 144 are to bepopulated with the firmware reload. As discussed, this reprogramming caninclude, at operation 254, programming the REM-profiled pages 150B withthe REM update (data and/or code) and setting the flag 152 to indicatethe REM-profiled pages have been programmed. In embodiments, the FWreload programs the REM-profiled pages 150B with self-test abilities,which includes the ability to output status or test data to the pagebuffer(s) 140 or registers 160 as debug data/info. At operation 258, thememory device 130 can verify the REM update has been applied to thefirmware of the ROM 138, and thus that the marginality of the memorydevice 130 has been resolved.

At operation 262, the host system 120 can load a confirmation of the REMupdate to the interface of the host system 120 that is available to thecustomer or user. The customer can then view or receive theconfirmation. At operation 264, the customer can confirm with the vendorthat the failure is resolved and resume the qualification test (QUAL).

FIG. 3 is a flow chart of an example method 300 for programming thememory sub-system for operation within the REM profile mode according toan embodiment. The method 300 can be performed by processing logic thatcan include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 300 is performed by the local media controller 135, e.g., controllogic of the memory device 130. Although shown in a particular sequenceor order, unless otherwise specified, the order of the processes can bemodified. Thus, the illustrated embodiments should be understood only asexamples, and the illustrated processes can be performed in a differentorder, and some processes can be performed in parallel. Additionally,one or more processes can be omitted in various embodiments. Thus, notall processes are required in every embodiment. Other process flows arepossible.

At operation 310, the processing logic executes a set features command,which in one embodiment, is received from the OTP operator 113 andenables access to the set of reserved pages 150. For example, the setfeatures command can be associated with the OTP operation mode andexecuted similarly, but can be directed to different OTP addressesand/or programmed with different sub-feature parameters.

At operation 320, the processing logic programs a set of sub-featureparameters to a specified feature address of a set of reserved pages. Inone embodiment, the reserved pages are one time programmable (OTP)pages, e.g., the OTP-profiled pages 150A. The set of sub-featureparameters are to trigger operation within a ROM-emulated memory (REM)profile mode. The specified feature address may include an address tothe first of a series of pages that are programmed with the sub-featureparameters that are REM-mode-specific parameters.

In one embodiment, to execute the set features command and program theset of sub-feature parameters to the specified feature address of theset of reserved pages, the processing logic is to execute theinstructions (of the ROM 138) in response to user inputs received fromthe host system. This embodiment of the REM profile mode is auser-selectable REM profile mode.

In a another embodiment, to execute the set features command and programthe set of sub-feature parameters to the specified feature address ofthe set of reserved pages, the processing logic is to execute theinstructions (of the ROM 138) in response to a remote command receivedfrom a vendor via the host system 120. This embodiment of the REMprofile mode is a remotely-selectable REM profile mode.

At operation 330, the processing logic programs a REM-profiled page 150Bof the set of reserved pages 150 with REM data received from a hostsystem 120. As discussed, this REM data can be patch or update to thefirmware or microcode executed by the ROM 138. The REM data can furtherbe or include REM code that is debug firmware or a test mode programthat provides testing abilities. In one embodiment, the REM-profiledpage can further include multiple REM-profiled pages corresponding to aset of different REM data or REM code.

At operation 340, the processing logic optionally sets a flag stored inone of a reserved page or the REM-profiled page. The flag 152 canindicate whether the REM data (or REM code) is stored in theREM-profiled page 150B. In other embodiments, although not illustrated,the flag is stored in one of the registers 160.

FIG. 4 is a flow chart of an example method 400 for selection andoperation within the REM profile mode after power up according tovarious embodiments. The method 400 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 400 is performed by the local media controller 135, e.g., controllogic of the memory device 130. In one embodiment, a first reserved pageof the set of reserved pages 150 stored a flag 152, although the flag152 could also be stored in one of the registers 160 or othernon-volatile memory. Although shown in a particular sequence or order,unless otherwise specified, the order of the processes can be modified.Thus, the illustrated embodiments should be understood only as examples,and the illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every embodiment. Other process flows are possible.

With reference to FIG. 4 , and after power up of the memory sub-system110, at operation 410, the processing logic detects (e.g., determines)whether the flag 152 is set within the first reserved page (or in othernon-volatile memory array). If the flag is set, this can be anindication that REM data (or REM code) stored in the set of reservedpages is associated with a REM profile mode. If the processing logicdetects that the flag is set, at operation 415, the processing logicexecutes a read page command to read REM data (or code) from aREM-profiled page where it was stored (see FIG. 3 .)

At operation 425, the processing logic loads the REM data (or REM code)from the REM-profiled page, of the set of reserved pages 150, into alatches buffer to be executed as a modification to operation of theinstructions stored in the ROM. As discussed, this REM data can be patchor update to the firmware or microcode executed by the ROM 138. The REMdata can further be or include REM code that is debug firmware or a testmode program that provides testing abilities. In one embodiment, theREM-profiled page can further include multiple REM-profiled pagescorresponding to a set of different REM data or REM code.

If the flag is not set, at operation 440, the processing logic executesa read page command to read OTP data (or code) from an OTP-profiled pageof the set of reserved pages. At operation 450, the processing logicloads production REM data from the OTP-profiled page into a latchesbuffer to be executed as a modification to operation of the instructionsstored in the ROM.

Advantages of the present disclosure include but are not limited tomaking possible firmware updates to the ROM of the memory device. Thisenables sending REM data to update the ROM firmware via customer modecommands or remotely by a vendor server. As discussed with reference toFIG. 2 , this is helpful for post qualification test issues that canonly be fixed via REM data. The advantages further include allowingin-field debugging, e.g., diagnosis of failures of the memory device.During memory device failures, the vendor can execute diagnostic testsand sequences through these REMs to triage a reason for the failure. TheREMs can also be written (e.g., to one of the registers 160) to output ahealth report that can be shared with customers. The vendor can usehealth report to root cause the issue. Furthermore, faster root causingis made possible because customer can execute the test via the existingset feature command.

Advantages of the present include further include but are not limited toallowing system teams the ability to load and execute test modes of thememory device. This ability provides internal system teams with theability to execute tests and diagnose health of the memory device 130.Accordingly, defects and failures can be detected earlier and preventedfrom happening, resulting in fewer customer failures. The advantages canfurther include optionally providing access to certain test modes (andtheir results) by customers without the customers having access to theREM data itself. Because invention uses existing OTP operation modefeatures, the REM data (or REM code) can be loaded via the REM profilemode and executed. The REM data/code can be restricted to be written toonly output status data to the page buffers that customers can read outor to status registers can be updated. This can be useful forspecialized customers that want to do targeted testing to rule outdefects. But at the same time, the vendor can protect the REM-relateddata and code by not disclosing test sequences.

FIG. 5 illustrates an example machine of a computer system 500 withinwhich a set of instructions, for causing the machine to perform any oneor more of the methodologies discussed herein, can be executed. In someembodiments, the computer system 500 can correspond to a host system(e.g., the host system 120 of FIGS. 1A-1B) that includes, is coupled to,or utilizes a memory sub-system (e.g., the memory sub-system 110 ofFIGS. 1A-1B) or can be used to perform the operations of a controller115 (e.g., to execute instructions of the OTP operator 113 of FIG. 1B).In alternative embodiments, the machine can be connected (e.g.,networked) to other machines in a LAN, an intranet, an extranet, and/orthe Internet. The machine can operate in the capacity of a server or aclient machine in client-server network environment, as a peer machinein a peer-to-peer (or distributed) network environment, or as a serveror a client machine in a cloud computing infrastructure or environment.

The machine can be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, a switch or bridge, or anymachine capable of executing a set of instructions (sequential orotherwise) that specify actions to be taken by that machine. Further,while a single machine is illustrated, the term “machine” shall also betaken to include any collection of machines that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies discussed herein.

The example computer system 500 includes a processing device 502, a mainmemory 504 (e.g., read-only memory (ROM), flash memory, dynamic randomaccess memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM(RDRAM), etc.), a static memory 506 (e.g., flash memory, static randomaccess memory (SRAM), etc.), and a data storage system 518, whichcommunicate with each other via a bus 530.

Processing device 502 represents one or more general-purpose processingdevices such as a microprocessor, a central processing unit, or thelike. More particularly, the processing device can be a complexinstruction set computing (CISC) microprocessor, reduced instruction setcomputing (RISC) microprocessor, very long instruction word (VLIW)microprocessor, or a processor implementing other instruction sets, orprocessors implementing a combination of instruction sets. Processingdevice 502 can also be one or more special-purpose processing devicessuch as an application specific integrated circuit (ASIC), a fieldprogrammable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. The processing device 502 is configuredto execute instructions 526 for performing the operations and stepsdiscussed herein. The computer system 500 can further include a networkinterface device 508 to communicate over the network 520.

The data storage system 518 can include a machine-readable storagemedium 524 (also known as a computer-readable medium) on which is storedone or more sets of instructions 526 or software embodying any one ormore of the methodologies or functions described herein. Theinstructions 526 can also reside, completely or at least partially,within the main memory 504 and/or within the processing device 502during execution thereof by the computer system 500, the main memory 504and the processing device 502 also constituting machine-readable storagemedia. The machine-readable storage medium 524, data storage system 518,and/or main memory 504 can correspond to the memory sub-system 110 ofFIGS. 1A-1B.

In one embodiment, the instructions 526 include instructions toimplement functionality corresponding to an error determining component(e.g., the OTP operator 113 of FIG. 1B). While the machine-readablestorage medium 524 is shown in an example embodiment to be a singlemedium, the term “non-transitory machine-readable storage medium” shouldbe taken to include a single medium or multiple media that store the oneor more sets of instructions. The term “machine-readable storage medium”shall also be taken to include any medium that is capable of storing orencoding a set of instructions for execution by the machine and thatcause the machine to perform any one or more of the methodologies of thepresent disclosure. The term “machine-readable storage medium” shallaccordingly be taken to include, but not be limited to, solid-statememories, optical media, and magnetic media.

Some portions of the preceding detailed descriptions have been presentedin terms of algorithms and symbolic representations of operations ondata bits within a computer memory. These algorithmic descriptions andrepresentations are the ways used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. An algorithm is here, and generally,conceived to be a self-consistent sequence of operations leading to adesired result. The operations are those requiring physicalmanipulations of physical quantities. Usually, though not necessarily,these quantities take the form of electrical or magnetic signals capableof being stored, combined, compared, and otherwise manipulated. It hasproven convenient at times, principally for reasons of common usage, torefer to these signals as bits, values, elements, symbols, characters,terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. The presentdisclosure can refer to the action and processes of a computer system,or similar electronic computing device, that manipulates and transformsdata represented as physical (electronic) quantities within the computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage systems.

The present disclosure also relates to an apparatus for performing theoperations herein. This apparatus can be specially constructed for theintended purposes, or it can include a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program can be stored in a computerreadable storage medium, such as, but not limited to, any type of diskincluding floppy disks, optical disks, CD-ROMs, and magnetic-opticaldisks, read-only memories (ROMs), random access memories (RAMs), EPROMs,EEPROMs, magnetic or optical cards, or any type of media suitable forstoring electronic instructions, each coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems can be used with programs in accordance with the teachingsherein, or it can prove convenient to construct a more specializedapparatus to perform the method. The structure for a variety of thesesystems will appear as set forth in the description below. In addition,the present disclosure is not described with reference to any particularprogramming language. It will be appreciated that a variety ofprogramming languages can be used to implement the teachings of thedisclosure as described herein.

The present disclosure can be provided as a computer program product, orsoftware, that can include a machine-readable medium having storedthereon instructions, which can be used to program a computer system (orother electronic devices) to perform a process according to the presentdisclosure. A machine-readable medium includes any mechanism for storinginformation in a form readable by a machine (e.g., a computer). In someembodiments, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium such as aread only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory components, etc.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific example embodiments thereof. Itwill be evident that various modifications can be made thereto withoutdeparting from the broader spirit and scope of embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

What is claimed is:
 1. A programmable memory device comprising: a readonly memory (ROM) block to store instructions associated withfunctionality of the programmable memory device; a memory arraycomprising a set of reserved pages to store updates to be performed onthe ROM block; and a controller coupled to the ROM block and the memoryarray, wherein the controller is to execute the instructions to performoperations comprising: executing a set features command to access theset of reserved pages, as an extension to a one-time programmable (OTP)mode; programming a set of sub-feature parameters to a specified featureaddress of the set of reserved pages, wherein the set of sub-featureparameters are to trigger operation within a ROM-emulated memory (REM)profile mode; programming a REM-profiled page of the set of reservedpages with REM data that includes REM code; executing the REM code outof the REM-profiled page to perform a diagnostic test on theprogrammable memory device; and outputting status data to one of pagebuffers or a status register of the programmable memory device.
 2. Theprogrammable memory device of claim 1, wherein the REM-profiled pagefurther comprises multiple REM-profiled pages corresponding to a set ofdifferent REM data.
 3. The programmable memory device of claim 1,wherein the operations further comprise: detecting receipt of a remotecommand from a vendor server via a host system; and in response to thedetecting, reloading the REM code received from the vendor server to theset of reserved pages.
 4. The programmable memory device of claim 1,wherein the operations further comprise setting a flag stored in one ofa reserved page or the REM-profiled page, the flag to indicate whetherthe REM data is stored in the REM-profiled page.
 5. The programmablememory device of claim 4, wherein the operations further comprise, uponpowering up of the programmable memory device: detecting that the flagis set; and loading the REM data from the REM-profiled page into alatches buffer to be executed as a modification to operation of theinstructions stored in the ROM.
 6. The programmable memory device ofclaim 5, further comprising static random access memory (SRAM) coupledto the controller, wherein the latches buffer is located within theSRAM, and the operations further comprise redirecting a state machine ofthe ROM to an identified address within the latches buffer.
 7. Theprogrammable memory device of claim 4, wherein the operations furthercomprise, upon powering up of the programmable memory device: detectingthat the flag is not set; and loading production REM data from the setof reserved pages into a latches buffer to be executed as a modificationto operation of the instructions stored in the ROM.
 8. A programmablememory device comprising: a read only memory (ROM) block to storeinstructions associated with functionality of the programmable memorydevice; a memory array comprising a set of reserved pages to storeupdates to be performed on the ROM block; and a controller coupled tothe ROM block and the memory array, wherein upon power up of theprogrammable memory device, the controller is to execute theinstructions to perform operations comprising: executing a read pagecommand to read ROM-emulated memory (REM) data from a REM-profiled pageof the set of reserved pages, wherein the REM data includes REM code;loading the REM data from the REM-profiled page stored in the set ofreserved pages into a latches buffer to be executed as a modification tooperation of the instructions stored in the ROM; executing the REM codeout of the REM-profiled page to perform a diagnostic test on theprogrammable memory device; and outputting status data to one of pagebuffers or a status register of the programmable memory device.
 9. Theprogrammable memory device of claim 8, wherein the reserved pages areone-time programmable (OTP) pages and wherein the REM-profiled pagecomprises multiple REM-profiled pages corresponding to a set ofdifferent REM data.
 10. The programmable memory device of claim 8,wherein a first reserved page of the set of reserved pages is to store aflag, and wherein the operations further comprise: detecting that theflag is set within the first reserved page, the flag to indicate the REMdata stored in the set of reserved pages is associated with a REMprofile mode; executing a set features command to access the set ofreserved pages; programming a set of sub-feature parameters to aspecified feature address of the set of reserved pages, wherein the setof sub-feature parameters are to trigger operation within the REMprofile mode; programming the REM-profiled page with the REM datareceived from a host system; and setting the flag within the firstreserved page.
 11. The programmable memory device of claim 8, furthercomprising registers coupled to the controller, wherein the latchesbuffer is located within a register of the coupled registers.
 12. Amethod comprising: operating a programmable memory device comprising aread only memory (ROM) block to store instructions associated withfunctionality of the programmable memory device, a memory arrayincluding a set of reserved pages to store updates to be performed onthe ROM block, and a controller, and wherein operating the programmablememory device comprises, in response to receipt of a remote command froma vendor server via a host system: executing, by the controller, a setfeatures command to access the set of reserved pages, as an extension toa one-time programmable (OTP) mode; writing, by the controller, a set ofsub-feature parameters to a specified feature address of the set ofreserved pages, wherein the set of sub-feature parameters are to triggeroperation within a ROM-emulated memory (REM) profile mode; programming,by the controller, a REM-profiled page of the set of reserved pages withone of REM data or REM code received from the vendor server via the hostsystem; and executing the REM code, by the controller, to perform adiagnostic test on the programmable memory device and output status datato one of a page buffer or a status register of the programmable memorydevice.
 13. The method of claim 12, wherein programming the REM-profiledpage further comprises programming each of multiple REM-profiled pages,of the set of reserved pages, corresponding to respective ones of a setof different REM data or REM code.
 14. The method of claim 12, whereinoperating the programmable memory device further comprises reloading theREM code to the set of reserved pages.
 15. The method of claim 12,wherein operating the programmable memory device further comprisessetting a flag associated with the REM data or REM code to indicatewhether the REM data or REM code is stored in the REM-profiled page. 16.The method of claim 15, wherein, upon power up of the programmablememory device, operating the programmable memory device furthercomprises: detecting that the flag is set; and loading the REM data orREM code from the REM-profiled page into a latches buffer to be executedas a modification to operation of the instructions stored in the ROM.17. The method of claim 15, wherein, upon power up of the programmablememory device, operating the programmable memory device furthercomprises: detecting that the flag is not set; and loading productionREM data from the set of reserved pages into a latches buffer to beexecuted as a modification to operation of the instructions stored inthe ROM.